Hi Steve,
Thank you for the additional information.
The high dV/dt transitions from the GHx signal look to be the cause of the transient observed in your initial post. I would recommend two possible solutions to try and mitigate this problem:
1.) If possible in your solution, slow down the switching speed of the GHx MOSFETs by increasing the gate resistor values. This will limit the gate current to a smaller value and slow the slew rate of the high-side MOSFETs.
2.) If slower slew rates are not possible, adding external pulldown resistors on the gates of the MOSFETs will help stop the low-side gate voltage from rising up during the high dV/dt transition.
Thank you for the additional information.
The high dV/dt transitions from the GHx signal look to be the cause of the transient observed in your initial post. I would recommend two possible solutions to try and mitigate this problem:
1.) If possible in your solution, slow down the switching speed of the GHx MOSFETs by increasing the gate resistor values. This will limit the gate current to a smaller value and slow the slew rate of the high-side MOSFETs.
2.) If slower slew rates are not possible, adding external pulldown resistors on the gates of the MOSFETs will help stop the low-side gate voltage from rising up during the high dV/dt transition.