Hi again,
I did some additional measurements: Ch1=High side FET gate, Ch2=Low side FET gate, Ch3=Rsense, all GNDs connected to Rsense GND pad.
First shot: Same conditions than yesterday (IDRIVEN=01, IDRIVEP=10). 2nd one: IDRIVEN=00, IDRIVEP=00 (default setting). 3rd one: IDRIVEP=01, series R @lowside FET reduced from 47R to 22R to reduce ringing.
