The Typ Qg = 75nC, the Max Qq is not listed, suppose the Max Qg for STP80NF70 is 300nC. Then we have
14.4ma = 300nC x 6 x 8Khz.
I have lower down the PWM freq to 8K, and increase drive peak current to DRV8301_PeakCurrent_1p70_A. Unless the actual STP80NF70 Qg goes up to 600nC, otherwise it should be under the 30ma limit. And gate serial resister to each gate drive signal has been increase from 0 to 30 ohm. The BOOSTXL-Drv8301 use 0 ohm and the DRV8301 EVM use 1, so I increase the resistor value to 30 ohm and hope it might limit the gate current down.
Is the MOSFET so critical to use with DRV8301? We have GVDD problem in previous DRV8301 circuit, and this version the GVDD is OK before the PWM signal applied. Once the PWM signals applied the GVDD drops to gnd and can not work back to normal even if the we repowered it. It's permanently not working any more.